new product sb3h90, sb3h100 www.vishay.com vishay general semiconductor revision: 19-aug-11 1 document number: 88720 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high-voltage schottky rectifier high barrier technology for improv ed high temperature performance features ? guardring for overvoltage protection ? low power losses and high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capabilitmy ? high frequency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in middle voltage high frequency inverters, freewheeling, dc/dc converte rs, and polarity protection applications. mechanical data case: do-201ad molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 2 01 class 1a whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 3.0 a v rrm 90 v, 100 v i fsm 100 a v f 0.65 v i r 20 a t j max. 175 c do-201ad maximum ratings (t a = 25 c unless otherwise noted) parameter symbol sb3h90 sb3h100 unit maximum repetitive pe ak reverse voltage v rrm 90 100 v maximum working reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at t l = 90 c i f(av) 3.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 100 a peak repetitive reverse surge current at t p = 2.0 s, 1 khz i rrm 1.0 a critical rate of rise of reverse voltage dv/dt 10 000 v/s storage temperature range t stg - 55 to + 175 c maximum operating j unction temperature t j 175 c
new product sb3h90, sb3h100 www.vishay.com vishay general semiconductor revision: 19-aug-11 2 document number: 88720 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) pcb mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol sb3h90 sb3h100 unit maximum instantaneous forward voltage i f = 3.0 a t j = 25 c v f (1) 0.80 v t j = 125 c 0.65 maximum reverse current at rated v r t j = 25 c i r (2) 20 a t j = 125 c 4.0 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol sb3h90 sb3h100 unit maximum thermal resistance r ? ja (1) 50 c/w r ? jl (1) 20 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode sb3h100-e3/54 1.09 54 1400 13" diameter paper tape and reel sb3h100-e3/73 1.09 73 1000 ammo pack packaging 0 25 50 75 100 125 150 175 0 1.0 2.0 3.0 4.0 re s i s tive or inductive load 0.375 " (9.5 mm) lead length lead temperature (c) average forwar d current (a) 1 10 100 20 10 40 60 80 100 t j = t j max. 8.3 m s s ingle half s ine-wave number of cycle s at 60 hz peak forwar d s urge current (a)
new product sb3h90, sb3h100 www.vishay.com vishay general semiconductor revision: 19-aug-11 3 document number: 88720 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical junction capacitance fig. 6 - typical tran sient thermal impedance package outline dimensions in inches (millimeters) 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 pul s e width = 300 s 1 % duty cycle in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 150 c t j = 125 c t j = 25 c t j = 100 c t j = 175 c 20 40 60 80 100 0.01 0.1 1 10 100 1000 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) t j = 150 c t j = 125 c t j = 25 c t j = 100 c 100 1000 0.1 10 1 10 100 rever s e voltage (v) junction capacitanc e (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.1 1 10 0.1 10 1 100 100 0 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) do-201ad 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2)
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